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MBRF1090CT, MBRF10100CT
www.vishay.com
Vishay General Semiconductor
Revision: 16-Aug-13
1
Document Number: 89126
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Dual High Voltage Trench MOS Barrier Schottky Rectifier
FEATURES
? Trench MOS Schottky technology
? Lower power losses, high efficiency
? Low forward voltage drop
? High forward surge capability
? High frequency operation
? Solder dip 275 °C max.
10 s, per JESD 22-B106
? Material categorization: For definitions of compliance
please see www.vishay.com/doc?99912
TYPICAL APPLICATIONS
For use in high frequency rectifier of switching mode power
supplies, freewheeling diodes, DC/DC converters or polarity
protection application.
MECHANICAL DATA
Case:
ITO-220AB
Molding compound meets UL 94
V-0 flammability rating
Base P/N-M3 - halogen-free, RoHS-compliant, and
commercial grade
Terminals:
Matte tin plated leads, solderable per
J-STD-002 and JESD 22-B102?
M3 suffix meets JESD 201 class 1A whisker test
Polarity:
As marked
Mounting Torque:
10 in-lbs max.
PRIMARY CHARACTERISTICS
IF(AV)
2 x 5.0 A
VRRM
90 V, 100 V
IFSM
120 A
VF
0.75 V
TJ max. 150 °C
Package ITO-220AB
Diode variations Common cathode
ITO-220AB
PIN 2
PIN 1
PIN 3
3
1
2
TMBS?
MAXIMUM RATINGS (TC
= 25 °C unless otherwise noted)
PARAMETER SYMBOL MBRF1090CT MBRF10100CT UNIT
Max. repetitive peak reverse voltage VRRM
90 100 V
Working peak reverse voltage VRWM
90 100 V
Max. DC blocking voltage VDC
90 100 V
Max. average forward rectified current at TC
= 105 °C
total device
per diode 5.0 IF(AV)
10
A
Peak forward surge current 8.3 ms single half sine-wave ?
superimposed on rated load per diode
IFSM
120 A
Non-repetitive avalanche energy ?
at TJ
= 25 °C, L = 60 mH per diode
EAS
60 mJ
Peak repetitive reverse current at tp
= 2 μs, 1 kHz,
?
TJ
= 38 °C ± 2 °C per diode
IRRM
0.5 A
Voltage rate of change (rated VR) dV/dt 10 000 V/μs
Operating junction and storage temperature range TJ, TSTG
- 65 to + 150 °C
Isolation voltage from terminal
to heatsink with t = 1 min V
AC
1500 V
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